MBR20H150CT, MBRF20H150CT & SB20H150CT-1
Dual Common-Cathode High-Voltage Schottky Rectifier
TO-220AB
ITO-220AB
FEATURES
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High frequency operation
1
2
3
1
2
3
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling and
polarity protection applications.
MBR20H150CT
TO-262AA
MBRF20H150CT
1
2
3
SB20H150CT-1
PIN 1
PIN 3
PIN 2
CASE
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Mounting Torque:
10 in-lbs maximum
Polarity:
As marked
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
2 x 10 A
150 V
200 A
0.75 V
175 °C
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
total device
per diode
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RRM
E
RSM
E
AS
dV/dt
T
J
, T
STG
V
AC
MBR20H150CT
150
150
150
20
10
200
1.0
10
11.25
10 000
- 65 to + 175
1500
UNIT
V
V
V
A
A
A
mJ
mJ
V/µs
°C
V
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
Peak repetitive reverse current per diode at t
p
= 2 µs, 1 kHz
Peak non-repetitive reverse surge energy per diode (8/20 µs waveform)
Non-repetitive avalanche energy per diode at 25 °C, I
AS
= 1.5 A, L = 10 mH
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min
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1
KERSEMI [ Kersemi Electronic Co., Ltd. ]
