MBR20H200CT, MBRF20H200CT & SB20H200CT-1
TO-220AB
ITO-220AB
FEATURES
• Guarding for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High frequency operation
1
2
3
1
2
3
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling and
polarity protection applications.
MBR20H200CT
TO-262AA
MBRF20H200CT
1
2
3
SB20H200CT-1
PIN 1
PIN 3
PIN 2
CASE
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Mounting Torque:
10 in-lbs maximum
Polarity:
As marked
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
2 x 10 A
200 V
290 A
0.75 V
175 °C
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
total device
per diode
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RRM
E
RSM
E
AS
V
C
dV/dt
T
J
, T
STG
V
AC
MBR20H200CT
200
200
200
20
10
290
1.0
20
20
25
10 000
- 65 to + 175
1500
UNIT
V
V
V
A
A
A
mJ
mJ
kV
V/µs
°C
V
www.kersemi.com
1
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
Peak repetitive reverse current per diode at t
p
= 2 µs, 1 kHz
Peak non-repetitive reverse surge energy per diode (8/20 µs waveform)
Non-repetitive avalanche energy per diode at 25 °C, I
AS
= 2.0 A, L = 10 mH
Electrostatic discharge capacitor voltage
human body model air discharge: C = 100 pF, R 0 1.5 kΩ
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 minute
KERSEMI [ Kersemi Electronic Co., Ltd. ]
