MBR20H90CTG & MBR20H100CTG
High Barrier Technology for Improved High Temperature Performance
FEATURES
TO-220AB
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
2
3
MBR20H90CTG
MBR20H100CTG
PIN 1
PIN 3
PIN 2
CASE
1
• High frequency operation
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching
mode power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
J
max.
10 A x 2
90 V, 100 V
150 A
0.70 V
3.5 µA
175 °C
MECHANICAL DATA
Case:
TO-220AB
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
= 155 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Peak repetitive reverse current per diode at t
p
= 2 µs, 1 kHz
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
total device
per diode
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RRM
dV/dt
T
J
, T
STG
MBR20H90CTG
90
90
90
20
10
150
0.5
10 000
- 65 to + 175
MBR20H100CTG
100
100
100
UNIT
V
V
V
A
A
A
V/µs
°C
www.kersemi.com
1
KERSEMI [ Kersemi Electronic Co., Ltd. ]
