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MBR850 参数 Datasheet PDF下载

MBR850图片预览
型号: MBR850
PDF下载: 下载PDF文件 查看货源
内容描述: 保护环片施工瞬态保护 [Guard Ring Die Construction for Transient Protection]
分类和应用: 二极管瞄准线功效局域网
文件页数/大小: 2 页 / 789 K
品牌: KERSEMI [ Kersemi Electronic Co., Ltd. ]
 浏览型号MBR850的Datasheet PDF文件第2页  
MBR830 - MBR860
8.0A SCHOTTKY BARRIER RECTIFIER
Features
·
·
·
·
·
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
Plastic Material: UL Flammability
Classification Rating 94V-0
TO-220AC
L
B
C
K
D
A
1
2
Dim
M
Min
14.22
9.65
2.54
5.84
¾
12.70
0.51
3.53Æ
3.56
1.14
0.30
2.03
4.83
Max
15.88
10.67
3.43
6.86
6.35
14.73
1.14
4.09Æ
4.83
1.40
0.64
2.92
5.33
A
B
C
D
E
G
J
E
J
R
Pin 1
Pin 2
Mechanical Data
·
·
·
·
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 2.24 grams (approx.)
Mounting Position: Any
Marking: Type Number
N
G
K
L
M
P
Case
N
P
R
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ T
C
= 125°C
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
(JEDEC Method)
Repetitive Peak Reverse Surge Current
Forward Voltage Drop
@ t
£
2.0ms
@ I
F
= 8.0A, T
C
= 125°C
@ I
F
= 8.0A, T
C
= 25°C
@ I
F
= 16A, T
C
= 25°C
@ T
C
= 25°C
@ T
C
= 125°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
I
RRM
V
FM
I
RM
C
j
R
qJC
dV/dt
T
j,
T
STG
MBR
830
30
21
@ T
A
= 25°C unless otherwise specified
MBR
835
35
24.5
MBR
840
40
28
8.0
150
1.0
0.57
0.70
0.84
0.1
15
250
3.0
1000
MBR
845
45
31.5
MBR
850
50
35
MBR
860
60
42
Unit
V
V
A
A
A
0.70
0.80
0.95
V
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
mA
pF
K/W
V/ms
°C
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change (Rated V
R
)
Operating and Storage Temperature Range
-65 to +150
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
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