欢迎访问ic37.com |
会员登录 免费注册
发布采购

MBRB20100CT-8W 参数 Datasheet PDF下载

MBRB20100CT-8W图片预览
型号: MBRB20100CT-8W
PDF下载: 下载PDF文件 查看货源
内容描述: 沟槽MOS肖特基技术 [Trench MOS Schottky technology]
分类和应用:
文件页数/大小: 4 页 / 1678 K
品牌: KERSEMI [ Kersemi Electronic Co., Ltd. ]
 浏览型号MBRB20100CT-8W的Datasheet PDF文件第2页浏览型号MBRB20100CT-8W的Datasheet PDF文件第3页浏览型号MBRB20100CT-8W的Datasheet PDF文件第4页  
MBR(F,B)2090CT & MBR(F,B)20100CT
TMBS
®
TO-220AB
ITO-220AB
FEATURES
1
2
3
MBR2090CT
MBR20100CT
PIN 1
PIN 3
PIN 2
CASE
2
1
3
MBRF2090CT
MBRF20100CT
PIN 1
PIN 3
PIN 2
Trench MOS Schottky technology
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB and ITO-220AB
package)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TO-263AB
K
2
1
MBRB2090CT
MBRB20100CT
PIN 1
PIN 2
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching
mode power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
K
HEATSINK
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
2 x 10 A
90 V, 100 V
150 A
0.65 V
150 °C
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
= 133 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Non-repetitive avalanche energy
at T
J
= 25 °C, L = 60 mH per diode
Peak repetitive reverse current at t
p
= 2 µs, 1 kHz,
T
J
= 38 °C ± 2 °C per diode
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 min
total device
per diode
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
E
AS
I
RRM
dV/dt
T
J
, T
STG
V
AC
MBR2090CT
90
90
90
20
10
150
130
0.5
10 000
- 65 to + 150
1500
MBR20100CT
100
100
100
UNIT
V
V
V
A
A
mJ
A
V/µs
°C
V
www.kersemi.com
1