MBR(F,B)2035CT thru MBR(F,B)2060CT
100
10 000
T
J
= 150 °C
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Instantaneous Forward Current (A)
10
Pulse
Width
= 300
µs
1
%
Duty Cycle
1.0
Junction Capacitance (pF)
T
J
= 25 °C
1000
0.1
MBR2035CT - MBR2045CT
MBR2050CT & MBR2060CT
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
MBR2035CT - MBR2045CT
MBR2050CT & MBR2060CT
100
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
100
100
MBR2035CT - MBR2045CT
MBR2050CT & MBR2060CT
10
T
J
= 125 °C
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
10
1
0.1
T
J
= 75 °C
1
0.01
T
J
= 25 °C
0.001
0
20
40
60
80
100
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
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