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U3910 参数 Datasheet PDF下载

U3910图片预览
型号: U3910
PDF下载: 下载PDF文件 查看货源
内容描述: 超低导通电阻 [Ultra Low On-Resistance]
分类和应用:
文件页数/大小: 10 页 / 3738 K
品牌: KERSEMI [ Kersemi Electronic Co., Ltd. ]
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PD - 91364B
IRFR/U3910
HEXFET
®
Power MOSFET
Ultra Low On-Resistance
l
Surface Mount (IRFR3910)
l
Straight Lead (IRFU3910)
l
Advanced Process Technology
l
Fast Switching
l
Fully Avalanche Rated
Description
l
D
V
DSS
= 100V
G
S
R
DS(on)
= 0.115Ω
I
D
= 16A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
D -P A K
T O -252 A A
I-P A K
T O -25 1A A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
†
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚†
Avalanche Current†
Repetitive Avalanche Energy†
Peak Diode Recovery dv/dt
ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
16
12
60
79
0.53
± 20
150
9.0
7.9
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
°C/W
www.kersemi.com
1
5/11/98