SMD Type
Silicon Epitaxial Planar Type
1SS306
Diodes
Unit: mm
Features
Low forward voltage
:V
F(2)
= 0.9 V(Typ)
Fast reverse recovery time :t
rr
= 30 ns (Typ)
Small total capacitance
:C
T
= 1.5 pF(Typ)
Absolute Maximum Ratings Ta = 25
Parameter
Maximum (peak) reverse voltage
Reverse voltage
Average forward current *
Maximum (peak) forward current *
Surge current (10 ms) *
Power dissipation
Junction Temperature
Storage Temperature
* Unit rating.Total rating = Unit rating X1.5
Symbol
V
RM
V
R
I
O
I
FM
I
FSM
P
T
j
T
stg
Rating
250
200
100
300
2
150
125
-55 + 125
Unit
V
V
mA
mA
A
mW
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Symbol
V
F(1)
V
F(2)
Reverse current
Total capacitance
Reverse recovery time
I
R(1)
I
R(2)
C
t
t
rr
I
F
= 1 mA
I
F
= 100mA
V
R
= 50 V
V
R
= 200 V
V
R
= 0, f = 1.0 MHz
1.5
30
Test Conditions
Min
Typ
0.72
0.9
Max
1.0
1.2
0.1
1.0
3.0
60
A
pF
ns
Unit
V
Marking
Marking
A3
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