SMD Type
Silicon Epitaxial Planar Type
1SS307
Diodes
Features
Low forward voltage
Low reverse Current
Small total capacitance
:V
F
=1.0 V(Typ)
:I
R
= 0.1 nA (Typ)
+0.1
2.4
-0.1
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
1.3
-0.1
:C
T
= 3.0 pF(Typ)
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Maximum (peak) reverse voltage
Reverse voltage
Average forward current
Maximum (peak) forward current
Surge current (10 ms)
Power dissipation
Junction Temperature
Storage Temperature
Symbol
V
RM
V
R
I
O
I
FM
I
FSM
P
T
j
T
stg
Rating
35
30
100
300
2
150
125
-55 + 125
Unit
V
V
mA
mA
A
mW
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse current
Total capacitance
Symbol
V
F
I
R
C
T
Test Conditions
I
F
= 100 mA
V
R
= 30 V
V
R
= 0, f = 1.0 MHz
Min
Typ
1.0
0.1
3.0
Max
1.3
10
6.0
Unit
V
nA
pF
Marking
Marking
C9
0-0.1
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