SMD Type
Silicon Epitaxial Planar Type
1SS370
SOT-23
Diodes
Unit: mm
Features
Low forward voltage
:V
F(3)
= 0.9 V(Typ)
+0.1
2.4
-0.1
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Fast reverse recovery time
Small total capacitance
:t
rr
= 60ns (MAX.)
:C
T
= 1.5 pF(Typ)
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Maximum (peak) reverse voltage
Reverse voltage
Average forward current
Maximum (peak) forward current
Surge current (10 ms)
Power dissipation
Junction Temperature
Storage Temperature
Symbol
V
RM
V
R
I
O
I
FM
I
FSM
P
T
j
T
stg
Rating
250
200
100
300
2
100
125
-55 + 125
Unit
V
V
mA
mA
A
mW
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Symbol
V
F(1)
V
F(2)
Reverse current
Total capacitance
Reverse recovery time
I
R(1)
I
R(2)
C
T
t
rr
Test Conditions
I
F
= 10 mA
I
F
= 100 mA
V
R
= 50 V
V
R
= 200 V
V
R
= 0, f = 1.0 MHz
I
F
= 10 mA
1.5
10
Min
Typ
0.72
0.90
Max
1.0
1.2
0.1
1.0
3.0
60
A
pF
ns
Unit
V
Marking
Marking
F5
+0.1
0.38
-0.1
0-0.1
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