SMD Type
Silicon Epitaxial Schottky Barrier Type
1SS372
Diodes
Features
Small package
Low forward voltage : V
F
= 0.23V (typ.) @ I
F
=5mA
1 ANODE
3 CATHODE/ANOD
2 CATHODE
Absolute Maximum Ratings Ta = 25
Parameter
Maximum (Peak) reverse voltage
Reverse voltage
Average forward current
Maximum (Peak) forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
Operating Temperature Range
*Unit Rating .Total Rating= Unit RatingX0.7
Symbol
V
RM
V
R
I
O
I
FM
I
FSM
P
T
j
T
stg
Topr
Rating
15
10
100 *
200 *
1*
100
125
-55 to +125
-40 to 100
Unit
V
V
mA
mA
A
mW
Electrical Characteristics Ta = 25
Parameter
Symbol
I
F
= 1mA
Forward voltage
V
F
I
F
= 5mA
I
F
= 100mA
Reverse current
Total capacitance
I
R
C
T
V
R
= 10V
V
R
= 0, f = 1MHz
20
Testconditons
Min
Typ
0.18
0.23
0.35
0.30
0.50
20
40
ìA
pF
V
Max
Unit
Marking
Marking
N9
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