SMD Type
Silicon Epitaxial Planar Diode
1SV262
Diodes
SOD-323
+0.1
1.7
-0.1
Unit: mm
+0.05
0.3
-0.05
+0.05
0.85
-0.05
Features
High Capacitance Ratio:C2V/C25V = 8(Typ.)
Low Series Resistance:rs = 0.6
(Typ.)
0.475
0.375
+0.1
2.6
-0.1
1.0max
Excellent C-V Characteristics,and Small Tracking Error.
Absolute Maximum Ratings Ta = 25
Parameter
Reverse Voltage
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
Symbol
V
R
V
RM
T
j
T
stg
Value
34
36(R
L
= 10 K
125
-55 to +125
)
Unit
V
V
Electrical C haracteristics T a = 25
P aram eter
R everse V oltage
R everse C urrent
C apacitance
S ym bol
V
R
I
R
C
2V
C
25V
C apacitance R atio
S eries R esistance
N ote :
A vailable in m atched group for capacitance to 2.0% .
C (M ax.)-C (M in.)
C (M in.)
(V
R
=2~25V )
0.020
C
2V
/C
25V
C
25V
/C
28V
r
s
V
R
= 5V , f = 470 M H z
C onditions
I
R
= 1
A
M in
34
10
33
2.6
12
1.03
0.6
0.8
35.5
2.85
12.5
38
3.0
Typ
M ax
U nit
V
nA
pF
V
R
= 32 V
f = 1 M H z;V
R
= 2 V
f = 1 M H z;V
R
= 25 V
Marking
Marking
TD
+0.05
0.1
-0.02
+0.1
1.3
-0.1
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