SMD Type
PNP Transistor
2SA1015
Transistors
IC
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
High voltage and high current
V
CEO
:=-50V(min.),I
C
=-150mA(max.)
Low niose: NF=1dB(Typ.) at f=1KHz
+0.1
1.3
-0.1
Features
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
-50
-50
-5
150
200
125
-55 to 125
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
I
c
= -100
Testconditons
A, I
E
=0
Min
-50
-50
-5
-0.1
-0.1
-0.1
130
400
-0.3
-1.1
80
V
V
MHz
Typ
Max
Unit
V
V
V
A
A
A
I
c
= -0.1mA, I
B
=0
I
E
= -100
A, I
C
=0
V
CB
=-50V , I
E
=0
V
CE
= -50V , I
B
=0
V
EB
=- 5V , I
C
=0
V
CE
=-6V, I
C
= -2mA
I
C
=-100 mA, I
B
= -10mA
I
C
=-100 mA, I
B
= -10mA
V
CE
=-10V, I
C
= -1mA,f=30MHz
h
FE
Classification
Marking
Rank
h
FE
130
L
200
200
BA
H
400
+0.1
0.38
-0.1
0-0.1
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