SMD Type
Silicon PNP Epitaxial
2SA1122
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
Features
+0.1
2.4
-0.1
+0.1
1.3
-0.1
Low frequency amplifier
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
T
stg
Rating
-55
-55
-5
-100
150
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Symbol
Testconditons
Min
-55
-55
-5
-0.5
-0.5
160
800
-0.5
-0.75
V
V
Typ
Max
Unit
V
V
V
ìA
ìA
V
(BR)CBO
I
C
= -10 ìA, I
E
= 0
V
(BR)CEO
I
C
= -1 mA, R
BE
=
V
(BR)EBO
I
E
= -10 ìA, I
C
= 0
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
V
CB
= -30 V, I
E
= 0
V
EB
= -2 V, I
C
= 0
V
CE
= -12 V, I
C
= -2 mA
I
C
= -10 mA, I
B
= -1 mA
V
CE
= -12 V, I
C
= -2 mA
h
FE
Classification
Marking
hFE
CC
160 320
CD
250 500
CE
400 800
0-0.1
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