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2SA1226 参数 Datasheet PDF下载

2SA1226图片预览
型号: 2SA1226
PDF下载: 下载PDF文件 查看货源
内容描述: 硅晶体管 [Silicon Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 38 K
品牌: KEXIN [ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]
   
SMD Type
Silicon Transistor
2SA1226
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
Features
+0.1
2.4
-0.1
High gain bandwidth product
Low output capacitance
Low noise
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage (R
BE
=
Collector-emitter voltage
Emitter-base voltage
Collector current - continuous
Total power dissipation at 25
Jumction temperature
Storage temperature
ambient temperature
)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
-40
-40
-5.0
-30
200
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter vVoltage
Gain bandwidth product
Output capacitance
Noise figure
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= -40V , I
E
= 0
V
EB
= -4.0V , I
C
= 0
V
CE
= -10V , I
C
= -1.0mA
40
90
-0.09
-0.67 -0.72
250
400
1.1
3.5
2.0
Min
Typ
Max
-0.1
-0.1
180
-0.3
V
V
MHz
pF
dB
Unit
ìA
ìA
V
CE(sat)
I
C
= -10mA , I
B
= -1.0mA
V
BE
f
T
C
ob
NF
V
CE
= -10V, I
C
= -10mA
V
CE
= -10V , I
E
= 1.0mA
V
CB
= -10V , I
E
= 0 , f = 1.0MHz
V
CE
= -10V, I
C
= -1.0mA, RG = 500Ù, f
= 1.0MHz
h
FE
Classification
Marking
hFE
E2
40 80
E3
60 120
E4
90 180
0-0.1
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