SMD Type
Transistors
IC
PNP Epitaxial Planar Silicon Transistors
2SA1256
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
High f
T
(230MHz typ), and small Cre (1.1pF typ).
Small NF (2.5dB typ).
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
+0.1
1.3
-0.1
Features
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
-30
-20
-5
-30
150
125
-55 to +125
Unit
V
V
V
mA
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Reverse transfer capacitace
Base-collector time constant
Noise figure
Voltage gain
Symbol
Ic
BO
I
EBO
h
FE
f
T
Cre
rbb,Cc
NF
PG
Testconditons
V
CB
= -10V , I
E
= 0
V
EB
= -4V , I
C
= 0
V
CE
= -6V , I
C
= -1mA
V
CE
= -6V , I
C
= -1mA
V
CB
= -6V , f = 1MHz
V
CE
= -6V , I
C
= -1mA , f = 31.9MHz
V
CE
= -6V , I
C
= -1mA , f = 100MHz
V
CE
= -6V , I
C
= -1mA , f = 100MHz
60
150
230
1.1
11
2.5
22
1.7
20
Min
Typ
Max
-0.1
-0.1
270
MHz
pF
ps
dB
dB
Unit
ìA
ìA
h
FE
Classification
Marking
hFE
60
E3
120
E4
90 180
E5
135 180
0-0.1
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