SMD Type
Silicon PNP Epitaxia
2SA1365
SOT-23
Transistors
IC
Unit: mm
Features
Low collector to emitter saturation voltage.
+0.1
2.4
-0.1
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Super mini package for easy mounting.
1
2
+0.1
0.95
-0.1
+0.1
1.9
-0.1
+0.1
1.3
-0.1
Excellent linearity nof DC forward current gain.
High collector current.
High gain band width product.
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Collector dissipation (Ta=25 )
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
C
T
j
T
stg
Rating
-25
-20
-4
-1
-700
150
125
-55 to +125
Unit
V
V
V
A
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain ( * )
Collector-emitter saturation voltage
Gain band width product
* It shows h
FE
classification in right table.
Symbol
Testconditons
Min
-25
-20
-4
-1
-1
150
-0.2
180
800
-0.5
V
MHz
Typ
Max
Unit
V
V
V
ìA
ìA
V
(BR) CBO
I
C
= -10 ìA, I
E
= 0
V
(BR) CEO
I
C
= -100 ìA,R
BE
=
V
(BR) EBO
I
E
= -10 ìA, I
C
= 0
I
CBO
I
EBO
h
FE
V
CE
f
T
V
CB
= -25 V, I
E
= 0
V
EB
= -2 V, I
C
= 0
V
CE
= -4 V, I
C
= -100 mA
I
C
= -500 mA, I
B
= -25 mA
V
CE
= -6 V, I
E
= 10 mA
h
FE
Classification
Marking
hFE
AE
150 300
AF
250
500
AG
400
800
0-0.1
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