SMD Type
Transistors
Epitaxial Planar PNP Silicon Transistor
2SA1455K
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
High breakdown voltage:V
CEO
=-120V
Low noise design:NF=0.2dB(Typ.)
+0.1
1.3
-0.1
Features
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
T
stg
Rating
-120
-120
-5
-50
200
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Transition frequency
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
I
C
=-50ìA
I
C
=-1mA
I
E
=-50ìA
V
CB
=-100V
V
EB
=-4V
V
CE
=-6V, I
C
=-2mA
180
Testconditons
Min
-120
-120
-5
-0.5
-0.5
820
-0.5
140
3.2
V
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
CE(sat)
I
C
=-10mA, I
B
=-1mA
f
T
C
ob
V
CE
=-12V, I
E
= 2mA, f=30MHz
V
CB
=-12V, I
E
=0A, f=1MHz
h
FE
Classification
Marking
Rank
hFE
R
180 390
G
S
270 560
E
390 820
+0.1
0.38
-0.1
0-0.1
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