SMD Type
PNP Silicon Epitaxia
2SA1611
Transistors
IC
Features
High DC Current Gain.
High Voltage.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
-60
-50
-5
-100
150
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage
Base-emitter voltage
Gain bandwidth product
Output capacitance
* Pulse test: tp
300 ìs; d
0.02.
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= -60V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -6V , I
C
= -1mA
90
200
-0.18
Min
Typ
Max
-0.1
-0.1
600
-0.3
V
V
MHz
pF
Unit
ìA
ìA
V
CE(sat)
I
C
= -100mA , I
B
= -10mA
V
BE
f
T
C
ob
V
CE
= -6V , I
C
= 1mA
V
CE
= -6V , I
E
= 10mA
V
CB
= -10V , I
E
= 0 , f = 1.0MHz
-0.58 -0.62 -0.68
180
4.5
h
FE
Classification
Marking
hFE
M4
90 180
M5
135
270
M6
200
400
M7
300
600
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