SMD Type
Silicon PNP Epitaxial
2SA1734
Transistors
IC
Features
Low saturation voltage: V
CE(sat)
= -0.5 V (max) (I
C
= -700 mA).
High speed switching time: tstg = 0.2ìs (typ.).
Small flat package.
PC = 1.0 to 2.0 W (mounted on ceramic substrate).
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
* Mounted on ceramic substrate (250 mm
2
X 0.8 t)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
*
Tj
T
stg
Rating
-40
-30
-6
-2
-1.2
500
1000
150
-55 to +150
Unit
V
V
V
A
A
mW
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