SMD Type
Power Switching Applications
2SA1735
Transistors
Features
Low Saturation Voltage: V
CE(sat)
= -0.5V (max) (I
C
= -500mA)
High Speed Switching Time: t
stg
= 0.25ìs(typ.)
Small Flat Package
P
C
= 1 to 2W (mounted on ceramic substrate)
Complementary to 2SC4540
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Jumction temperature
Storage temperature Range
* Mounted on ceramic substrate (250 mm
2
x 0.8 t)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C *
T
j
T
stg
Rating
-60
-50
-6
-1
-0.2
500
1000
150
-55 to +150
Unit
V
V
V
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn-On Time
Storage Time
Fall Time
Symbol
I
CBO
I
EBO
Testconditons
V
CB
= -60V , I
E
= 0
V
EB
= -6V , I
C
= 0
-50
120
40
-0.5
-1.2
100
16
0.1
See Test Circuit.
0.25
0.1
ìs
V
V
MHz
pF
400
Min
Typ
Max
-0.1
-0.1
Unit
ìA
ìA
V
V
(BR)CEO
I
C
= -10mA , I
B
= 0
h
FE
V
CE
= -2V , I
C
= -100mA
V
CE
= -2V , I
C
= -700mA
V
CE(sat)
I
C
= -500mA , I
B
= -25mA
V
BE(sat)
I
C
= -500mA , I
B
= -25mA
f
T
C
ob
t
on
t
stg
t
f
V
CE
= -2V , I
C
= -100mA
V
CB
= -10V , I
E
= 0 , f = 1MHz
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