SMD Type
Power Transistor
2SA1797
SOT-89
+0.1
4.50
-0.1
Transistors
Unit: mm
+0.1
1.50
-0.1
1.80
+0.1
-0.1
Low saturation voltage. V
CE(sat)
=-0.35V(Max.) at I
C
/ I
B
=-1A/-50mA.
+0.1
0.80
-0.1
Excellent DC current gain characteristics.
Complements the 2SA1797 and 2SC4672.
+0.1
0.48
-0.1
+0.1
0.53
-0.1
+0.1
4.00
-0.1
Features
+0.1
2.50
-0.1
+0.1
0.44
-0.1
+0.1
2.60
-0.1
+0.1
3.00
-0.1
+0.1
0.40
-0.1
1. Base
2. Collector
3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-emitter Voltage
Collector-base Voltage
Emitter-base Voltage
Collector current
Collector power dissipation
Jumction temperature
Storage temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
j
T
stg
Rating
-50
-50
-6
-3
0.5
150
-55 to +150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltae
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-Emitter Saturation Voltage
DC current transfer ratio
Transition frequency
Output Capacitance
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
I
C
= -1mA
I
C
= -50 A
I
E
= -50 A
V
CB
= -50V
V
EB
= -5V
Testconditons
Min
-50
-50
-6
-0.1
-0.1
-0.15 -0.35
82
200
36
270
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
V
CE(sat)
I
C
= -1A , I
B
= -50mA
h
FE
f
T
C
ob
V
CE
= -2V , I
C
= -0.5A
V
CE
= -2V , I
E
= 0.5A , f = 100MHz
V
CB
= -10V , I
E
= 0A , f = 1MHz
h
FE
Classification
Marking
Rank
hFE
P
82 180
AG
Q
120 270
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