SMD Type
Silicon PNP Epitaxial Type Transistor
2SA1832
Transistors
IC
SOT-523
+0.1
1.6
-0.1
Unit: mm
Features
High Voltage and High Curren :V
CEO
=-50V,I
C
=-150mA(Max.)
Excellent hFE Linearity :
hFE (I
C
=-0.1mA/ hFE(I
C
=-2mA)=0.95(Typ.)
High hFE: hFE=70 to 400
2
+0.1
1.0
-0.1
+0.05
0.2
-0.05
+0.01
0.1
-0.01
1
+0.15
1.6
-0.15
0.55
+0.25
0.3
-0.05
+0.1
0.5
-0.1
0.35
3
1. Base
+0.05
0.75
-0.05
+0.1
-0.1
0.8
2. Emitter
3. Collecter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
-50
-50
-5
-150
-30
100
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Collector-emitter saturation voltage
Collector Output Capacitance
Transition frequency
Symbol
Ic
BO
I
EBO
h
FE
Testconditons
V
CB
= -5V , I
E
= 0
V
EB
= -5V , I
C
= 0
V
CE
= -6V , I
C
= -2mA
70
-0.1
4
80
Min
Typ
Max
-0.1
-0.1
400
-0.3
7
V
pF
MHz
Unit
A
A
V
CE(sat)
I
C
= -100mA , I
B
= -10mA
C
ob
f
T
V
CB
=-10V,I
E
=0,f=1MHz
V
CE
=-10V,I
C
=-1mA
h
FE
Classification
Marking
Rank
hFE
70
SQ
Q
140
120
SY
Y
240
SG
GR
200
400
+0.05
0.8
-0.05
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