SMD Type
Medium power transistor
2SA1900
Transistors
IC
Features
Low saturation voltage, typically V
CE(sat)
= ?0.15V at IC /
I
B
= ?500mA / ?50mA
P
C
=2W (on 40X40X0.7mm ceramic board)
Absolute Maximum Ratings Ta = 25
Parameter
Collector-emitter Voltage
Collector-base Voltage
Emitter-base Voltage
Collector current
Symbol
V
CEO
V
CBO
V
EBO
I
C
Rating
-60
-50
-5
-1
-2
Collector power dissipation
Jumction temperature
Storage temperature
*1 Single pulse Pw=20ms, Duty=1/2
*2 When mounted on a 40X40X0.7mm seramic board.
P
C
T
j
T
stg
0.5
2
150
-55 to +150
Unit
V
V
V
A
A(Pulse) *1
W
W *2
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltae
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-Emitter Saturation Voltage
DC current transfer ratio
Transition frequency
Output Capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
C
= -50µA
I
C
= -1mA
I
E
= -50µA
V
CB
= -40V
V
EB
= -4V
Testconditons
Min
-60
-50
-5
-0.1
-0.1
-0.4
120
150
20
270
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
V
CE(sat)
I
C
/I
B
= -500mA/-50mA
h
FE
f
T
C
ob
V
CE
/I
C
= -3V/-0.5A
V
CE
= -5V , I
E
= 50mA , f=100MHz
V
CB
= -10V , I
E
= 0A , f=1MHz
Marking
Marking
ALQ
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