SMD Type
Low Frequency Transistor
2SA2018
Transistors
IC
SOT-523
+0.1
1.6
-0.1
+0.1
1.0
-0.1
+0.05
0.2
-0.05
Unit: mm
Features
A collector current is large
Collector saturation voltage is low. V
CE(sat)
250mA
at I
C
=200mA/I
B
=10mA
2
+0.01
0.1
-0.01
1
+0.15
1.6
-0.15
0.55
+0.25
0.3
-0.05
+0.1
0.5
-0.1
0.35
3
1. Base
+0.05
0.75
-0.05
+0.1
-0.1
0.8
2. Emitter
3. Collecter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse, Pw=1ms
Symbol
V
CBO
V
CEO
I
C
I
CP
*
P
C
T
j
T
stg
Rating
15
12
500
1
150
150
-55 to +150
Unit
V
V
mA
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
DC current gain
Collector-emitter saturation voltage
Output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE
I
C
=10
I
C
=1mA
I
E
=10
A
A
Testconditons
Min
15
12
6
100
270
100
6.5
260
680
250
mV
pF
MHz
Typ
Max
Unit
V
V
V
nA
V
CB
=15V
V
CE
=2V, I
C
=10mA
V
CE(sat)
I
C
/I
B
=200mA/10mA
C
ob
f
T
V
CB
=10V, I
E
=0A, f=1MHz
V
CE
=2V, I
E
=10mA, f=100MHz
Marking
Marking
BW
+0.05
0.8
-0.05
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