SMD Type
Silicon PNP Epitaxial
2SB1000
Transistors
Features
Low frequency amplifier.
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
peak collector current
Collector power dissipation
Junction temperature
Storage temperature
* PW
10 ms; d
0.02.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
P
C
Tj
T
stg
Rating
-25
-20
-5
-1
-1.5
1
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio *
Collector to emitter saturation voltage *
Base to emitter saturation voltage *
Gain bandwidth product
Collector output capacitance
Symbol
Testconditons
Min
-25
-20
-5
-0.1
-0.1
85
-0.2
-0.94
200
38
240
-0.3
-1.1
V
V
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
(BR)CBO
I
C
= -10 ìA, I
E
= 0
V
(BR)CEO
I
C
= -1 mA, R
BE
=
V
(BR)EBO
I
E
= -10 ìA, I
C
= 0
I
CBO
I
EBO
h
FE
V
CB
= -20 V, I
E
= 0
V
EB
= -4 V, I
C
= 0
V
CE
= -2 V, I
C
= -0.5 A
V
CE(sat)
I
C
= -0.8 A, I
B
= -0.08 A
V
BE(sat)
I
C
= -0.8 A, I
B
= -0.08 A
f
T
C
ob
V
CE
= -2 V, I
C
= -0.15 A
V
CB
= -10 V, I
E
= 0 f=1MHz
h
FE
Classification
Marking
hFE
AH
85 170
AJ
120 240
www.kexin.com.cn
1