SMD Type
Silicon PNP Epitaxial
2SB1025
Transistors
Features
Low frequency power amplifier
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
peak collector current
Collector power dissipation
Junction temperature
Storage temperature
*1. PW
10 ms; d
0.02.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
1
P
C
*
2
Tj
T
stg
Rating
-120
-80
-5
-1
-2
1
150
-55 to +150
Unit
V
V
V
A
A
W
*2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
Symbol
Testconditons
Min
-120
-80
-5
-10
60
320
-1
-0.9
140
20
V
V
MHz
pF
Typ
Max
Unit
V
V
V
ìA
V
(BR)CBO
I
C
= -10 ìA, I
E
= 0
V
(BR)CEO
I
C
= -1 mA, R
BE
=
V
(BR)EBO
I
E
= -10 ìA, I
C
= 0
I
CBO
h
FE
V
CB
= -100V, I
E
= 0
V
CE
= -5 V,I
C
= -150 mA
V
CE(sat)
I
C
= -500 mA,I
B
= -50 mA
V
BE
f
T
C
ob
V
CE
= -5 V,I
B
= -150 mA
V
CE
= -5 V,I
C
= -150 mA
V
CB
= -10 V, I
E
= 0,f = 1 MHz
h
FE
Classification
Marking
hFE
DH
60 120
DJ
100 200
DK
160 320
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