SMD Type
PNP Silicon Epitaxial Transistor
2SB1115
Transistors
Features
World standard miniature package.
Low V
CE(sat)
: V
CE(sat)
=-0.2V at 1A
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current (pulse) *
Total power dissipation
Junction temperature
Storage temperature range
* Pulsed: PW
10 ms, duty cycle
50%
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
T
T
j
T
stg
Rating
-60
-50
-6
-1
-2
2
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW
350 ìs, duty cycle
2%
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= -60 V, I
E
= 0
V
EB
= -6.0 V, I
C
= 0
V
CE
= -2.0 V, I
C
= -100 mA
V
CE
= -2.0 V, I
C
= -1.0A
V
CE(sat)
I
C
= -1.0A, I
B
= -50 mA
V
BE(sat)
I
C
= -1.0A, I
B
= -50 mA
V
BE
f
T
C
ob
V
CE
= -2.0 V, I
C
= -50 mA
V
CE
= -2.0 V, I
E
= -100 mA
V
CB
= -10 V, I
E
= 0 , f = 1.0 MHz
-600
80
120
25
135
100
340
200
-0.2
-0.9
-0.3
-1.2
-700
V
V
V
MHz
pF
Min
Typ
Max
-100
-100
600
Unit
nA
nA
h
FE
Classification
Marking
h
FE
YM
135 270
YL
200 400
YK
300 600
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