SMD Type
Transistors
PNP Epitaxial Planar Silicon Transistors
2SB1119
Features
Very small size making it easy to provide highdensity,
small-sized hybrid IC’
s.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
-25
-25
-5
-1
-2
500
150
-55 to +150
Unit
V
V
V
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Output capacitance
Symbol
I
CBO
I
EBO
h
FE
f
T
Testconditons
V
CB
= -20V , I
E
= 0
V
CB
= -4V , I
E
= 0
V
CE
= -2V , I
C
= -50mA
V
CE
= -2V , I
C
= -1A
V
CE
= -10V , I
C
= -50mA
100
40
180
-0.15
-0.85
-25
-25
-5
52
-0.7
-1.2
MHz
V
V
V
V
V
pF
Min
Typ
Max
-0.1
-0.1
560
Unit
ìA
ìA
V
CE(sat)
I
C
= -500mA , I
B
= -50mA
V
BE(sat)
I
C
= -500mA , I
B
= -50mA
V
(BR)CBO
I
C
= -10ìA , I
E
= 0
V
(BR)CEO
I
C
= -1mA , R
BE
=
V
(BR)EBO
I
E
= -10ìA , I
C
= 0
C
ob
V
CB
= -10V , f = 1MHz
h
FE
Classification
Marking
Rank
hFE
R
100 200
S
140 280
BB
T
200 400
U
280 560
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