SMD Type
Power Transistor
2SB1275
TO-252
+0.15
1.50
-0.15
Transistors
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
Features
High breakdown voltage.(B
VCEO
= -160V)
+0.2
9.70
-0.2
6.50
+0.2
5.30
-0.2
+0.15
-0.15
Typ. 30pF at V
CB
= 10V
High transition frequency.(f
T
= 50MHZ)
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
-160
-160
-5
-1.5
-3
Collector power dissipation
Junction temperature
Storage temperature
P
C
T
j
T
stg
1
10
150
?55 to +150
Unit
V
V
V
A(DC)
A(Pulse)
W(Tc=25 )
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
B
VCBO
B
VCEO
B
VEBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
ob
I
C
= -50ìA
I
C
= -1mA
I
E
= -50ìA
V
CB
= -120V
V
EB
= -4V
I
C
/I
B
= -1A/-0.1A
V
CE
= -5V , I
C
= -0.1A
V
CE
= -5V , I
E
= 0.1A , f = 30MHz
V
CB
= -10V , I
E
=0A , f = 1MHz
82
50
30
Testconditons
Min
-160
-160
-5
-1
-1
-2
180
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
h
FE
Classification
TYPE
hFE
P
82 to 180
3
.8
0
Low collector output capacitance.
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