SMD Type
Transistors
PNP Epitaxial Planar Silicon Transistors
2SB1302
Features
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Large current capacity.
Fast switching speed.
Very small size making it easy to provide highdensity,
small-sized hybrid ICs.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
-25
-20
-5
-5
-8
1.3
150
-55 to +150
Unit
V
V
V
A
A
W
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