SMD Type
Low Frequency Transistor
2SB1386
Transistors
Features
Low VCE(sat).
V
CE(sat)
= -0.35V (Typ.)
(I
C
/I
B
= -4A / -0.1A)
Excellent DC current gain
Epitaxial planar type
PNP silicon transistor
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current(Pulse)
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse, Pw=10ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
P
C
Tj
T
stg
Rating
-30
-20
-6
-5
-10
0.5
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
C
=-50ìA
I
C
=-1mA
I
E
=-50ìA
V
CB
=-20V
V
EB
=-5V
Testconditons
Min
-30
-20
-6
-0.5
-0.5
-1
82
120
60
390
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
V
CE(sat)
I
C
=-4A,I
B
=-0.1A
hFE
C
ob
f
T
V
CE
=-2V, I
C
=-0.5A
V
CE
=-6V, I
E
=50mA, f=30MHz
V
CB
=-20V, I
E
=0A, f=1MHz
h
FE
Classification
Marking
Rank
hFE
P
82 180
BH
Q
120 270
R
180 390
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