SMD Type
Low Frequency Transistor
2SB1412
TO-252
+0.15
1.50
-0.15
Transistors
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
Features
Low V
CE(sat)
.
+0.2
9.70
-0.2
6.50
+0.2
5.30
-0.2
+0.15
-0.15
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
PNP silicon transistor.
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current pulse
Collector power dissipation
(Tc=25 )
Junction temperature
Storage temperature
* Single pulse ,PW=10ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
P
C
Tj
T
stg
Rating
-30
-20
-6
-5
-10
-10
1
10
150
-55 to +150
Unit
V
V
V
A(DC)
A (Pulse)*
A
W
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Transition frequency
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
C
=-50ìA
I
C
=-1mA
I
E
=-50ìA
V
CB
=-20V
V
EB
=-5V
-0.35
82
120
60
Testconditons
Min
-30
-20
-6
-0.5
-0.5
-1.0
390
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
V
CE(sat)
I
C
= -4A, I
B
= -0.1A
h
FE
f
T
C
ob
V
CE
= -2V, I
C
= -0.5A
V
CE
= -6V, I
E
=50mA, f=100MHz
V
CB
= -20V,I
E
=0A,f=1MHz
h
FE
Classification
Rank
hFE
P
82 180
Q
120 270
R
180 390
3
.8
0
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