SMD Type
Silicon PNP Transistor
2SB768
TO-252
+0.15
1.50
-0.15
Transistors
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
Features
High Voltage:V
CBO
=-150V
6.50
+0.2
5.30
-0.2
+0.15
-0.15
+0.2
9.70
-0.2
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse) *1
Total Power Dissipation *2
Junction Temperature
Storage Temperature
*1 PW
10ms,.Duty Cycle 50%
Ta=25
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
Rating
-200
-150
-5
-2
-3
2
150
-55 to 150
Unit
V
V
V
A
A
W
*2 when mounted on ceramic substrate of 7.5cm
2
X 0.7mm
Electrical Characteristics Ta = 25
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain *
Collector-to-Emitter Saturation Voltage *
Gain Badnwidth Product
* Pulsed :pw 350ìs,Duty Cycle 2%
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Testconditons
V
CB
=-150V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-10V, I
C
=-0.4A
I
C
=-500mA, I
B
=-50mA
V
CE
=-10V,I
E
=-0.4mA
40
80
-0.15
10
Min
Typ
Max
-50
-50
200
-1.0
V
MHz
Unit
ìA
ìA
h
FE
Classification
Marking
hFE
M
40 to 80
L
60 to 120
K
100 to 200
3
.8
0
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