SMD Type
PNP Silicon Power Transistor
2SB772
Features
Low saturation voltage.
V
CE(sat)
-0.5(@ I
C
=-2A,I
B
=-0.2A)
Transistors
Excellent h
FE
h
FE
: 60 to 400 (@V
CE
=-2V,I
C
=-1A)
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector Power dissipation
T
A
= 25
T
C
= 25
Junction temperature
Storage temperature range
* PW
350ì
S
,duty cycle 2%.
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
c
Rating
-40
-30
-5
-3
1.0
10
150
-55 to +150
Unit
V
V
V
A
W
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Output capacitance
Transition frequency
* Pulsed: PW
350
s, duty cycle
2%
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
Testconditons
Ic=-100 A,I
E
=0
I
C
= -10 mA , I
B
=0
I
E
= -100 A
I
C
=0
Min
-40
-30
-5
-1.0
-1.0
60
160
-0.3
-1.0
55
80
400
-0.5
-2.0
V
V
pF
MHz
Typ
Max
Unit
V
V
V
A
A
V
CB
= -30 V, I
E
= 0
V
EB
= -6V, I
C
= 0
V
CE
= -2.0 V, I
C
= -1.0A *
V
CE(sat)
I
C
= -2A, I
B
= -0.2A
V
BE(sat)
I
C
= -2A, I
B
= -0.2A
C
ob
f
T
V
CB
= -10 V, I
E
= 0,f=1.0MHz
V
CE
= -5.0 V, I
E
= -0.1A,f=10MHz
h
FE
Classification
Rank
h
FE
R
60 120
Q
100 200
P
160 320
E
200 400
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