SMD Type
PNP Silicon Epitaxial Transistor
2SB800
Transistors
Features
World standard miniature package:SOT-89
High collector to emitter voltage:V
CEO
-80V
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current(Pulse) *
Total power dissipation
Junction temperature
Storage temperature range
* PW
10ms,duty cycle 50%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
T
T
j
T
stg
Rating
-80
-80
-5
-300
-500
2.0
150
-55 to +150
Unit
V
V
V
mA
mA
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW
350 ìs, duty cycle
2%
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= -80 V, I
E
= 0
V
EB
= -5.0 V, I
C
= 0
V
CE
= -1.0 V, I
C
= -50 mA
V
CE
= -2.0 V, I
C
= -300 mA
V
CE(sat)
I
C
= -300mA, I
B
= -30mA
V
BE(sat)
I
C
= -300mA, I
B
= -30mA
V
BE
f
T
C
ob
V
CE
= -6.0 V, I
C
= -10 mA
V
CE
= -6.0 V, I
E
= 10 mA
V
CB
= -6.0 V, I
E
= 0 , f = 1.0 MHz
-600
90
30
200
80
-0.3
-0.9
-660
100
13
-0.6
-1.2
-700
V
V
mV
MHz
pF
Min
Typ
Max
-100
-100
400
Unit
nA
nA
h
FE
Classification
Marking
h
FE
FM
90 180
FL
135 270
FK
200 400
www.kexin.com.cn
1
KEXIN [ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]
