SMD Type
PNP Silicon Epitaxial Transistor
2SB805
Transistors
Features
High collector to emitter voltage: V
CEO
-100V.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse) *1
Collector power dissipation
Junction temperature
Storage temperature
*1. PW
10ms,duty cycle 50%
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(pu)
P
c
T
j
T
stg
Rating
-100
-100
-5
-0.7
-1.2
2
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Output capacitance
Transition frequency
* PW
350ìs,duty cycle 2%
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= -100V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
=-1V , I
C
= -100mA
V
CE
=-1V , I
C
= -5.0mA
V
CE(sat)
I
C
= -500mA , I
B
= -50mA
V
BE(sat)
I
C
= -500mA , I
B
= -50mA
V
BE
C
ob
f
T
V
CE
=-10V , I
C
= -10mA
V
CB
= -10V , I
E
= 0 , f = 1.0MHz
V
CE
= -10V , I
E
= 10mA
-550
90
45
200
200
-0.4
-0.9
-620
14
75
-0.6
-1.5
-650
V
V
mV
pF
MHz
Min
Typ
Max
-100
-100
400
Unit
nA
nA
h
FE
Classification
Marking
hFE
90
KM
180
KL
135
270
KK
200
400
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