SMD Type
Silicon PNP Epitaxial
2SB831
Transistors
IC
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
Features
+0.1
2.4
-0.1
+0.1
1.3
-0.1
Low frequency amplifier.
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
T
stg
Rating
-25
-20
-5
-0.7
1
150
150
-55 to +150
Unit
V
V
V
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio *
Collector to emitter saturation voltage *
Base to emitter voltage *
* Pulse test.
Symbol
Testconditons
Min
-25
-20
-5
-1
85
240
-0.5
-1
V
V
Typ
Max
Unit
V
V
V
mA
V
(BR)CBO
I
C
= -10 ìA, I
E
= 0
V
(BR)CEO
I
C
= -1 mA, R
BE
=
V
(BR)EBO
I
E
= -10 ìA, I
C
= 0
I
CBO
h
FE
V
CB
= -20 V, I
E
= 0
V
CE
= -1 V, I
C
= -0.15 A
V
CE(sat)
I
C
= -0.5 A, I
B
= -0.05 A
V
BE
V
CE
= -1 V, I
C
= -0.15 A
h
FE
Classification
Marking
hFE
BB
85 170
BC
120 240
0-0.1
www.kexin.com.cn
1
KEXIN [ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]
