SMD Type
Silicon PNP Epitaxial Planar Type
2SB968
TO-252
+0.15
1.50
-0.15
Transistors
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
Features
Possible to solder the radiation fin directly to printed cicuit board.
High collector-emitter voltage V
CEO.
+0.2
9.70
-0.2
6.50
+0.2
5.30
-0.2
+0.15
-0.15
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
Large collector power dissipation P
C.
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
-50
-40
-5
-1.5
-3
10
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Collector-base cutoff curent
Collector cutoff curent
Emitter-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
Testconditons
I
C
= -1 mA, I
E
= 0
I
C
= -2 mA, I
B
= 0
V
CB
= -20 V,I
E
= 0
V
CE
= -10 V,I
B
= 0
V
EB
= -5 V, I
C
= 0
V
CE
= -5 V, I
C
= -1 A
V
CE
= -5 V, I
C
= -1mA
V
CE(sat)
I
C
= -1.5 A, I
B
= -0.15 A
V
BE(sat)
I
C
= -2 A, I
B
= -0.2 A
f
T
C
ob
V
CE
= -5 V, I
C
= -0.5 A , f = 200 MHz
V
CB
= -20V , I
E
= 0 , f = 1.0MHz
150
45
80
10
-1
-1.5
V
V
MHz
pF
Min
-50
-40
-1
-100
-10
220
Typ
Max
Unit
V
V
ìA
ìA
ìA
V
h
FE
Classification
Rank
h
FE
Q
80 160
R
120 220
3
.8
0
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