SMD Type
Silicon NPN Epitaxial
2SC2618
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
+0.1
2.4
-0.1
Features
Low frequency amplifier.
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
35
35
4
500
150
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Symbol
Testconditons
Min
35
35
4
0.5
100
10
0.2
0.64
0.6
V
V
320
Typ
Max
Unit
V
V
V
ìA
V
(BR)CBO
I
C
= 10ìA , I
E
= 0
V
(BR)CEO
I
C
= 1mA , R
BE
=
V
(BR)EBO
I
E
= 10ìA , I
C
= 0
I
CBO
h
FE
1
h
FE
2
V
CB
= 20V, I
C
= 0
V
CE
= 3V , I
C
= 10mA
V
CE
= 3V , I
C
= 500mA
V
CE(sat)
I
C
= 150mA , I
B
= 15mA
V
BE
V
CE
= 3V , I
C
= 10mA
h
FE
Classification
Marking
hFE
RC
100 200
RD
160 320
0-0.1
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