SMD Type
Silicon NPN Epitaxial
2SC3011
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
Features
+0.1
2.4
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
High fT : fT=6.5GHz
0.55
Low Noise Figure: NF=2.3dB(Typ.) f=1GHz
+0.1
1.3
-0.1
High Gain :|S
21e
|
2
=12dB(TYP.)
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
Rating
20
7
3
30
10
150
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Reverse Transfer Capacitance
Input Capacitance
Transition Frequency
Insertion Gain
Noise Figure
Symbol
I
CBO
I
EBO
Testconditons
V
CB
= 10 V, I
E
= 0
V
EB
= 1.0 V, I
C
= 0
7
30
120
0.1
0.87
V
CB
= 5 V, I
E
= 0, f = 1 MHz
V
EB
=0,I
C
=0,f=1MHZ
V
CE
=5V,I
C
=10mA
V
CE
=5V,I
C
=10mA,f=1GHZ
V
CE
=5V,I
C
=5mA,f=1GHz
0.7
0.5
0.8
6.5
12
2.3
0.9
V
V
pF
pF
pF
GHz
dB
dB
Min
Typ
Max
1.0
1.0
Unit
ìA
ìA
V
V
(BR)CEO
I
C
= 0.5 mA, I
B
= 0
h
FE
V
CE (sat)
V
BE (sat)
C
ob
Cre
Cib
f
T
|S
21e
|
2
NF
V
CE
= 5 V, I
C
= 10 mA
I
C
= 10 mA, I
B
= 1mA
Marking
Marking
MA
0-0.1
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