SMD Type
Silicon NPN Epitaxial
2SC3072
TO-252
Transistors
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
Features
High DC current gain.
Low collector saturation voltage.
+0.2
9.70
-0.2
+0.15
1.50
-0.15
6.50
+0.2
5.30
-0.2
+0.15
-0.15
High power dissipation.
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current pulse *
Base current
Collector power dissipation
T
a
= 25
T
c
= 25
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
Rating
50
20
8
5
8
0.5
1.0
10
150
-55 to +150
Unit
V
V
V
A
A
A
W
W
* Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
Testconditons
V
CB
= 20 V, I
E
= 0
V
EB
= 8 V, I
C
= 0
20
140
70
1.0
1.5
100
40
V
V
MHz
pF
450
Min
Typ
Max
100
100
Unit
nA
nA
V
V
(BR)CEO
I
C
= 10 mA, I
B
= 0
h
FE
V
CE
= 2 V, I
C
= 0.5A
V
CE
= 2 V, I
C
= 4A
V
CE (sat)
I
C
= 4 A, I
B
= 0.1 A
V
BE
f
T
C
ob
V
CE
= 2 V, I
C
= 4 A
V
CE
= 2 V, I
C
= 0.5 A
V
CB
= 10 V, I
E
= 0, f = 1 MHz
h
FE
Classification
Marking
Rank
hFE
A
140 240
C3072
B
200 330
C
300 450
3
.8
0
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