SMD Type
Silicon NPN Epitaxial
2SC3076
TO-252
Transistors
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
Features
Low Collectror Saturation Voltage:V
CE(sat)
=0.5V(Max.)(I
C
=1A)
Excellent Switching Time :t
stg
=1.0ìs(Typ.)
+0.2
9.70
-0.2
+0.15
1.50
-0.15
6.50
+0.2
5.30
-0.2
+0.15
-0.15
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base Current
Collector power dissipation
Ta=25
TC=25
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
T
j
T
stg
Rating
50
50
5
2
1
1.0
10
150
-55 to 150
Unit
V
V
V
A
A
A
W
3
.8
0
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