SMD Type
Silicon NPN Epitaxial
2SC3120
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
+0.1
2.4
-0.1
Features
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
30
15
3
50
25
150
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Reverse Transfer Capacitance
Transition Frequency
Conversion Gain
Noise Figure
Symbol
I
CBO
I
EBO
Testconditons
V
CB
= 30V, I
E
= 0
V
EB
= 2V, I
C
= 0
15
40
100
0.6
1500
12
2400
17
8
200
0.9
pF
MHz
dB
dB
Min
Typ
Max
0.1
1.0
Unit
ìA
ìA
V
V
(BR)CEO
I
C
=1mA,I
B
=0
h
FE
Cre
f
T
G
ce
NF
V
CE
= 10 V, I
C
= 5 mA
V
CB
=10V, I
E
=0, f=1MHz
V
CE
= 10 V, I
C
= 2mA
V
CE
= 10 V, I
C
= 2mA,f=800MHz
F
L
=830MHz
Marking
Marking
HB
0-0.1
www.kexin.com.cn
1
KEXIN [ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]
