SMD Type
Silicon NPN Epitaxial Planar Type
2SC3429
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
+0.1
2.4
-0.1
Features
Low Noise Figure
NF=1.5dB,|S
21e
|
2
=16dB(f=500MHz)
NF=1.5dB,|S
21e
|
2
=10.5dB(f=1GHz)
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
17
12
3
70
30
150
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collecter Output Capacitance
Reverse Transfer Capacitance
Transition Frequency
Insertion Gain
Symbol
I
CBO
I
EBO
h
FE
C
ob
C
re
fT
V
CE
=10V.I
C
=20mA
Testconditons
V
CB
= 10 V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 10 V, I
C
= 20mA
V
CB
=10V,I
E
=0,f=1MHz
25
0.85
0.57
5
16
10.5
1.5
1.7
pF
pF
GHz
dB
dB
dB
dB
Min
Typ
Max
1
1
Unit
nA
nA
|S
21e
|
2
(1) V
CE
=10V.I
C
=20mA,f=500MHz
|S
21e|
2
(2) V
CE
=10V.I
C
=20mA,f=1GHz
NF(1)
NF(2)
V
CE
=10V.I
C
=5mA,f=500MHz
V
CE
=10V.I
C
=5mA,f=1GHz
Noise Figue
Marking
Marking
ME
0-0.1
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