SMD Type
Silicon NPN Epitaxial
2SC3437
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
High transition frequency: f
T
= 400 MHz (typ).
+0.1
2.4
-0.1
Low saturation voltage: V
CE (sat)
= 0.3 V (max).
High speed switching time: tstg = 15 ns (typ).
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
Features
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Rating
40
15
5
200
40
150
125
-55 to +125
Unit
V
V
V
mA
mA
mW
0-0.1
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