SMD Type
NPN Silicon Epitaxia
2SC3617
Transistors
Features
World standard miniature package.
High hFE hFE=800 to 1600.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (Pulse)*
Total power dissipation
Junction temperature
Storage temperature
* PW
10ms,duty cycle 50%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
Rating
50
50
15
300
500
2.0
150
-55 to +150
Unit
V
V
V
mA
mA
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
*. PW
350ìs,duty cycle 2%
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= 50V, I
E
=0
V
EB
= 10V, I
C
=0
V
CE
= 5.0V , I
C
= 100mA
V
CE
= 5.0V , I
C
= 300mA
V
CE(sat)
I
C
= 100mA , I
B
= 1.0mA
V
BE(sat)
I
C
= 100mA , I
B
= 1.0mA
f
T
C
ob
V
CE
= 5.0V , I
E
= -50mA
V
CB
= 10V , I
E
= 0, f = 1.0MHz
150
800
640
0.12
0.7
220
8.0
0.13
1.2
V
V
MHz
pF
Min
Typ
Max
100
100
3200
Unit
nA
nA
h
FE
Classification
Marking
hFE
TM
800 1600
TL
1200 2400
TK
2000
3200
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