SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor
2SC3650
Features
High DC current gain (hFE=800 to 3200).
Low collector-to-emitter saturation voltage
(V
CE(sat)
0.5V).
Large current capacity (I
C
=1.2V).
Very small size making it easy to provide highdensity,
small-sized hybrid IC’
s.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
cp
P
C
T
j
T
stg
Rating
30
25
15
1.2
2
500
150
-55 to +150
Unit
V
V
V
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
Testconditons
V
CB
=20V, I
E
=0
V
EB
=10V, I
C
=0
V
CE
=5V, I
C
=500mA
V
CE
=10V, I
C
=50mA
V
CB
=10V, f=1MHz
800
1500
220
17
0.12
0.85
30
25
15
0.5
1.2
Min
Typ
Max
0.1
0.1
3200
MHz
pF
V
V
V
V
V
Unit
ìA
ìA
V
CE(sat)
I
C
=500mA, I
B
=10mA
V
BE(sat)
I
C
=500mA, I
B
=10mA
V
(BR)CBO
I
C
=10ìA, I
E
=0
V
(BR)CEO
I
C
=1mA, R
BE
=
V
(BR)EBO
I
E
=10ìA, I
C
=0
Marking
Marking
CF
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