SMD Type
NPN Silicon Epitaxial Transistor
2SC3624
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
Features
+0.1
2.4
-0.1
Low V
CE(sat)
: (V
CE(sat)
= 0.07 V TYP).
1
2
+0.1
1.3
-0.1
High DC current Gain: h
FE
= 1000 to 3200.
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
60
50
12
150
200
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Base-emitter voltage *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Turn-off time
*. PW
350ìs,duty cycle 2%
Symbol
I
CBO
I
EBO
h
FE
V
BE
Testconditons
V
CB
= 50V, I
E
=0
V
EB
= 10V, I
C
=0
V
CE
= 5V , I
C
= 1mA
V
CE
= 5V , I
C
= 1mA
1000
1800
0.56
0.07
0.8
250
3
0.13
0.72
1.22
0.3
1.2
Min
Typ
Max
100
100
3200
V
V
V
MHz
pF
ns
ns
ns
Unit
nA
nA
V
CE(sat)
I
C
= 50mA , I
B
= 5mA
V
BE(sat)
I
C
= 50mA , I
B
= 5mA
f
T
C
ob
t
on
t
stg
t
off
V
CE
= 5V , I
E
= -10mA
V
CB
= 5V , I
E
= 0 , f = 1.0MHz
V
CC
= 10V , V
BE(off)
= -2.7V
I
C
= 50mA ,
I
B1
= -I
B2
= 1mA
h
FE
Classification
Marking
h
FE
L17
1000 2000
L18
1600 3200
0-0.1
www.kexin.com.cn
1
KEXIN [ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]
