SMD Type
Transistors
IC
NPN Epitaxial Planar Silicon Transistor
2SC3661
SOT-23
Unit: mm
Low frequency general-purpose amplifiers, drivers, muting circuit.
+0.1
2.4
-0.1
Adoption of FBET process.
High DC current gain (h
FE
=800 to 3200).
Low collector-to-emitter saturation voltage (V
CE(sat)
High V
EBO
(V
EBO
15V).
0.5V).
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
Features
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
cp
P
C
T
j
T
stg
Rating
30
25
15
300
500
200
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
Testconditons
V
CB
= 20V, I
E
=0
V
EB
= 10V, I
C
=0
V
CE
=5V , I
C
= 10mA
V
CE
= 10V , I
C
= 10mA
V
CB
= 10V , f = 1.0MHz
800
1500
250
2.7
0.12
0.85
30
25
15
0.5
1.2
Min
Typ
Max
0.1
0.1
3200
MHz
pF
V
V
V
V
V
Unit
ìA
ìA
V
CE(sat)
I
C
= 200mA , I
B
= 4mA
V
BE(sat)
I
C
= 200mA , I
B
= 4mA
V
(BR)CBO
I
C
= 10ìA , I
E
= 0
V
(BR)CEO
I
C
= 1mA , I
B
= 0
V
(BR)EBO
I
E
= 10ìA , I
C
= 0
Marking
Marking
FY
0-0.1
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